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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 44, Issue 5, Pages 10–15 (Mi pjtf5864)

This article is cited in 5 papers

A study of the crystal structure of Co$_{40}$Fe$_{40}$B$_{20}$ epitaxial films on a Bi$_{2}$Te$_{3}$ topological insulator

A. K. Kaveeva, S. M. Suturina, N. S. Sokolova, K. A. Kokhbc, O. E. Tereshchenkocd

a Ioffe Institute, St. Petersburg
b Sobolev Institute of Geology and Mineralogy, Siberian Branch of the Russian Academy of Sciences, Novosibirsk
c Novosibirsk State University
d Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk

Abstract: Laser molecular-beam epitaxy has been used to form Co$_{40}$Fe$_{40}$B$_{20}$ layers on Bi$_{2}$Te$_{3}$ topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi$_{2}$Te$_{3}$. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

Received: 14.09.2017

DOI: 10.21883/PJTF.2018.05.45702.17043


 English version:
Technical Physics Letters, 2018, 44:3, 184–186

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