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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 44, Issue 4, Pages 34–41 (Mi pjtf5879)

This article is cited in 3 papers

Peculiarities of silicon-donor ionization and electron scattering in pseudomorphous AlGaAs/InGaAs/GaAs quantum wells with heavy unilateral $\delta$-doping

D. A. Safonova, A. N. Vinichenkoab, N. I. Kargina, I. S. Vasil'evskiia

a National Engineering Physics Institute "MEPhI", Moscow
b Immanuel Kant Baltic Federal University, Kaliningrad

Abstract: The influence of the concentration of silicon donors on the electron-transport properties of pseudomorphous Al$_{0.25}$Ga$_{0.75}$As/In$_{0.2}$Ga$_{0.8}$ As/GaAs quantum wells (QWs) in heterostructures with heavy unilateral $\delta$-doping by Si atoms was studied in a broad temperature interval (2.1–300 K). High electron mobility (up to 35700 cm$^2$/(V s)) at $T$ = 4.2 K was observed at a 2D (sheet) electron density of 2 $\times$ 10$^{12}$ cm$^{-2}$ in the QW. A band mechanism limiting the ionization of donors at an increased level of doping is described. The nonmonotonic variation of electron mobility with increasing silicon concentration is explained. A growth in the mobility is related to increase in the Fermi momentum and screening, while the subsequent decay is caused by tunneling-induced degradation of the spacer layer with decreasing potential of the conduction band in the region of $\delta$-Si layer. It is shown that the effect is not related to filling of the upper subband of dimensional quantization.

Received: 13.06.2017

DOI: 10.21883/PJTF.2018.04.45636.16915


 English version:
Technical Physics Letters, 2018, 44:2, 145–148

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