M. S. Buyalo, I. M. Gadzhiev, N. D. Il'inskaya, A. A. Usikova, I. I. Novikov, L. Ya. Karachinsky, E. S. Kolodeznyi, V. E. Bugrov, A. Yu. Egorov, E. L. Portnoĭ, “Mode-locked lasers with “thin” quantum wells in 1.55 <nobr>$\mu$</nobr>m spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 4,Pages <nobr>95

This article is cited in 1 paper

Mode-locked lasers with “thin” quantum wells in 1.55 $\mu$m spectral range

M. S. Buyalo^a, I. M. Gadzhiev^a, N. D. Il'inskaya^a, A. A. Usikova^a, I. I. Novikov^bc, L. Ya. Karachinsky^bc, E. S. Kolodeznyi^c, V. E. Bugrov^c, A. Yu. Egorov^c, E. L. Portnoĭ^a

^a Ioffe Institute, St. Petersburg
^b Connector Optics LLC, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: We present the results of an experimental study of two-section semiconductor lasers with active region consisting of three 3.1 nm InGaAs/InGaAlAs quantum wells. Passive mode-locking regime with a repetition rate of 10 GHz is realized. Different approaches have been compared to determine the stability of pulse repetition.

Received: 02.10.2017

DOI: 10.21883/PJTF.2018.04.45644.17064