4$H$-SiC based subnanosecond (150 ps) high-voltage (1600 V) current breakers

High-voltage (1600 V) diodes based on epitaxial 4$H$-SiC p$^{++}$–p$^{+}$–p–n$_{\operatorname{o}}$–n$^{+}$ structures are tested as fast current breakers included in a special pulsed circuit. The measured current-breakdown time is about 150 ps. This is a record short time for high-voltage (above 1000 V) silicon-carbide diode breakers. The saturated hole-drift velocity in 4$H$-SiC of $p$ type is experimentally estimated for the first time: $v_{sp}$ = 3 $\times$ 10$^6$ cm/s.