R. R. Reznik, G. E. Cirlin, I. V. Shtrom, A. I. Khrebtov, I. P. Sotnikov, N. V. Kryzhanovskaya, È. I. Moiseev, A. E. Zhukov, “Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 3,Pages <nobr>55–61</nobr>

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018 Volume 44, Issue 3, Pages 55–61 (Mi pjtf5896)

This article is cited in 12 papers

Coherent growth of InP/InAsP/InP nanowires on a Si (111) surface by molecular-beam epitaxy

R. R. Reznik^abcd, G. E. Cirlin^abcd, I. V. Shtrom^ab, A. I. Khrebtov^a, I. P. Sotnikov^abe, N. V. Kryzhanovskaya^a, È. I. Moiseev^a, A. E. Zhukov^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^b Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Peter the Great St. Petersburg Polytechnic University
^e Ioffe Institute, St. Petersburg

Abstract: Results obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of $\sim$1.3 $\mu$m at room temperature.

Received: 28.07.2017

DOI: 10.21883/PJTF.2018.03.45579.16991

English version: Technical Physics Letters, 2018, 44:2, 112–114

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