S. A. Nomoev, I. S. Vasil'evskii, A. N. Vinichenko, K. I. Kozlovskii, A. A. Chistyakov, E. D. Mishina, D. I. Khusyainov, A. M. Buryakov, “The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2018, Volume 44, Issue 2,Pages <nobr>11

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The influence of the annealing regime on the properties of terahertz antennas based on low-temperature-grown gallium arsenide

S. A. Nomoev^a, I. S. Vasil'evskii^a, A. N. Vinichenko^a, K. I. Kozlovskii^a, A. A. Chistyakov^a, E. D. Mishina^b, D. I. Khusyainov^b, A. M. Buryakov^b

^a National Engineering Physics Institute "MEPhI", Moscow
^b MIREA — Russian Technological University, Moscow

Abstract: Low-temperature gallium arsenide (LT-GaAs) films were grown by the method of molecularbeam epitaxy (MBE) at a reduced temperature (230$^\circ$C) on GaAs(100) substrates and subjected to postgrowth annealing in various regimes. Photoconductive antennas (PCAs) with flag geometry formed on the film surface were characterized by terahertz (THz) response power at various bias voltages. The method of THz spectroscopy was used to study the characteristics of PCAs based on LT-GaAs films annealed in various regimes and the optimum interval of postgrowth annealing temperatures (670–720$^\circ$C) was established.

Received: 03.07.2017

DOI: 10.21883/PJTF.2018.02.45459.16947