Abstract:
Vertical-cavity surface-emitting lasers (VCSELs) with an aperture limited by an oxide and a resonance cavity based on GaAlAs with high Al content provide a maximum $\gamma$ factor ($\lambda/2$ design) and suppression of optical power beyond the aperture. A VCSEL with two coupled cavities provides additional sharp growth of the loss of high-order lateral modes by leakage to the oxidized region and provides single-mode laser generation for an aperture diameter of up to 5 $\mu$m. Single-mode antiwaveguiding VCSELs provide ultrafast data transmission with a rate of up to 160 Gbit/s. The structure in which the active medium is placed in the lower distributed Bragg reflector and the cavity and the upper distributed Bragg reflector are dielectric, reducing the temperature shift of the radiation wavelength by a factor of 2 (to $\sim$0.03 nm/K).