Electron traps in Gd$_{3}$Ga$_{3}$Al$_{2}$O$_{12}$:Ce garnets doped with rare-earth ions

The curves of thermally stimulated luminescence of Gd$_{3}$Ga$_{3}$Al$_{2}$O$_{12}$:Ce$^{3+}$ ceramics (a nominally pure sample and samples doped with rare-earth ions) are measured in the temperature range of 80–550 K. The depth and the frequency factor of electron traps established by Eu and Yb impurities are determined. An energy-level diagram of rare-earth ions in the bandgap of Gd$_{3}$Ga$_{3}$Al$_{2}$O$_{12}$ is presented.