Abstract:
The effect of low exposure doses (5–40 kR) of gamma radiation on the electrical properties of structures based on a mesoporous silicon (SiMP) layer is investigated. It is demonstrated that the conductivity of the SiMP layer increases, the Fermi level shifts, and the trap density changes in gamma-irradiated Al/SiMP/$p$-Si/Al structures. Long-term stable switched-state memory in the region of the I–V curve hysteresis is revealed. This effect is controlled by the irradiation dose.