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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 43, Issue 22, Pages 48–54 (Mi pjtf6070)

This article is cited in 8 papers

Epitaxial stresses in an InGaAs photoconductive layer for terahertz antennas

D. I. Khusyainova, A. M. Buryakova, V. R. Bilyka, E. D. Mishinaa, D. S. Ponomarevb, R. A. Khabibullinb, A. E. Yachmenevb

a MIREA — Russian Technological University, Moscow
b Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow

Abstract: The effect of epitaxial stresses on the excess-carrier dynamics and the terahertz radiation spectrum of the In$_{y}$Ga$_{1-y}$As films have been investigated by optical pump-probe and terahertz time-domain spectroscopy. It has been demonstrated that a In$_{y}$Ga$_{1-y}$As film with a higher mechanical stress has the shorter excesscarrier lifetime and broader terahertz radiation spectrum.

Received: 07.07.2017

DOI: 10.21883/PJTF.2017.22.45260.16958


 English version:
Technical Physics Letters, 2017, 43:11, 1020–1022

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