V. V. Tregulov, V. G. Litvinov, A. V. Ermachikhin, “Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 21,Pages <nobr>3

This article is cited in 3 papers

Defects with deep levels in a semiconductor structure of a photoelectric converter of solar energy with an antireflection film of porous silicon

V. V. Tregulov^a, V. G. Litvinov^b, A. V. Ermachikhin^b

^a Ryazan State University S. A. Esenin
^b Ryazan State Radio Engineering University

Abstract: Defects in a semiconductor structure of a photoelectric converter of solar energy based on a $p$–$n$ junction with an antireflection film of porous silicon on the front surface have been studied by current deeplevel transient spectroscopy. An explanation of the influence of thickness of a porous-silicon film formed by electrochemical etching on the character of transformation of defects with deep levels and efficiency of solarenergy conversion is proposed.

Received: 27.06.2017

DOI: 10.21883/PJTF.2017.21.45155.16929