Transport properties of graphene films grown by thermodestruction of SiC (0001) surface in argon medium

We present the results of investigations of the transport properties of graphene films obtained by thermodestruction of a 4$H$-SiC (0001) surface in argon. The charge-carrier concentration in the graphene layer was within 7 $\times$ 10$^{11}$ – 1 $\times$ 10$^{12}$ cm$^{-2}$, and the maximum mobility of electrons approached 6000 cm$^2$/(V $\cdot$ s). The achieved parameters of mobility are close to theoretical values calculated for graphene films with intrinsic conductivity on the Si face of SiC at $T$ = 300 K in the absence of intercalated hydrogen.