V. G. Talalaev, V. I. Shtrom, Yu. B. Samsonenko, A. I. Khrebtov, A. D. Bouravlev, G. E. Cirlin, “Directional emission from beryllium doped GaAs/AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 17,Pages <nobr>71–77</nobr>

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 43, Issue 17, Pages 71–77 (Mi pjtf6137)

This article is cited in 2 papers

Directional emission from beryllium doped GaAs/AlGaAs nanowires

V. G. Talalaev^ab, V. I. Shtrom^bcde, Yu. B. Samsonenko^ce, A. I. Khrebtov^c, A. D. Bouravlev^bcde, G. E. Cirlin^cefg

^a Martin Luther University Halle-Wittenberg, Halle, Germany
^b Saint Petersburg State University
^c Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^d Ioffe Institute, St. Petersburg
^e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^f St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^g Peter the Great St. Petersburg Polytechnic University

Abstract: The emission directionality of self-catalytic GaAs nanowires in an AlGaAs shell, produced by molecular-beam epitaxy with a varied level of beryllium doping, is studied. It is shown that an undoped sample possesses pronounced waveguide properties along the growth direction. With increasing doping level, the intensity of the emission directed perpendicular to the lateral nanowire walls grows.

Received: 28.09.2016

DOI: 10.21883/PJTF.2017.17.44949.16504

English version: Technical Physics Letters, 2017, 43:9, 811–813

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