D. S. Korolev, A. A. Nikolskaya, N. O. Krivulin, A. I. Belov, A. N. Mikhaylov, D. A. Pavlov, D. I. Tetelbaum, N. A. Sobolev, M. Kumar, “Formation of hexagonal 9<nobr>$R$</nobr> silicon polytype by ion implantation”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017, Volume 43, Issue 16,Pages <nobr>87

This article is cited in 9 papers

Formation of hexagonal 9$R$ silicon polytype by ion implantation

D. S. Korolev^a, A. A. Nikolskaya^a, N. O. Krivulin^a, A. I. Belov^a, A. N. Mikhaylov^a, D. A. Pavlov^a, D. I. Tetelbaum^a, N. A. Sobolev^b, M. Kumar^c

^a Lobachevsky State University of Nizhny Novgorod
^b Ioffe Institute, St. Petersburg
^c Indian Institute of Technology Jodhpur, Jodhpur, India

Abstract: Transmission electron-microscopy examination revealed the appearance of a hexagonal silicon (9$R$ polytype) inclusions in the subsrface silicon layer upon ion implantation and subsequent heat treatment of the SiO$_2$/Si structure. The formation of this hexagonal phase is stimulated by mechanical stresses arising in the heterophase system in the course of ion implantation.

Received: 03.05.2017

DOI: 10.21883/PJTF.2017.16.44937.16852