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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 43, Issue 12, Pages 25–33 (Mi pjtf6195)

This article is cited in 8 papers

Growth technology and characteristics of thin strontium iridate films and iridate–cuprate superconductor heterostructures

A. M. Petrzhika, G. Cristianib, G. Logvenovb, A. E. Pestunc, N. V. Andreevc, Yu. V. Kislinskiia, G. A. Ovsyannikova

a Kotel'nikov Institute of Radio Engineering and Electronics, Russian Academy of Sciences, Moscow
b Max Planck Institute for Solid State Research, Stuttgart, Germany
c National University of Science and Technology «MISIS», Moscow

Abstract: A technology for epitaxial growth of thin films of strontium iridate (Sr$_{2}$IrO$_{4}$) and related heterostructures with cuprate superconductor (Sr$_{2}$IrO$_{4}$/YBa$_{2}$Cu$_{3}$O$_{7-\delta}$) has been proposed and developed. It is established that the two-layer structure grows epitaxially and the cuprate superconductor layer has the same critical temperature as that ($\sim$91 K) of an autonomous film. Crystallographic parameters of the obtained iridate films are close to tabulated values and the temperature dependence of their electric resistivity is consistent with published data.

Received: 10.01.2017

DOI: 10.21883/PJTF.2017.12.44705.16704


 English version:
Technical Physics Letters, 2017, 43:6, 554–557

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