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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2017 Volume 43, Issue 11, Pages 55–62 (Mi pjtf6213)

This article is cited in 5 papers

Subnanosecond impact-ionization switching of silicon structures without $p$$n$ junctions

N. I. Podolska, P. B. Rodin

Ioffe Institute, St. Petersburg

Abstract: It is shown that an application of a fast-rising high-voltage pulse to an $n^{+}-n-n^{+}$ silicon structure leads to subnanosecond avalanche breakdown, generation of electron–hole plasma throughout the entire structure, and structure switching to the conducting state in a time of about 100 ps. The predicted effect is similar to the delayed avalanche breakdown of reverse-biased $p^{+}-n-n^{+}$ diode structures; however, it is implemented in a structure without $p$$n$ junctions.

Received: 15.12.2016

DOI: 10.21883/PJTF.2017.11.44697.16608


 English version:
Technical Physics Letters, 2017, 43:6, 527–530

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