G. V. Benemanskaya, P. A. Dementev, S. A. Kukushkin, M. N. Lapushkin, A. V. Osipov, S. N. Timoshnev, “Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 23,Pages 51

This article is cited in 3 papers

Photoemission studies of the vicinal SiC(100) 4$^\circ$ surface and the Cs/SiC(100) 4$^\circ$ interface

G. V. Benemanskaya^ab, P. A. Dementev^ab, S. A. Kukushkin^bcd, M. N. Lapushkin^abc, A. V. Osipov^bc, S. N. Timoshnev^be

^a Ioffe Institute, St. Petersburg
^b Institute of Problems of Mechanical Engineering, Russian Academy of Sciences, St. Petersburg
^c St. Petersburg National Research University of Information Technologies, Mechanics and Optics
^d Peter the Great St. Petersburg Polytechnic University
^e Saint Petersburg National Research Academic University, St. Petersburg

Abstract: Photoemission studies of the electronic structure of the vicinal SiC(100) 4$^\circ$ surface, which was grown using a new substrate atom substitution method, and the Cs/SiC(100) 4$^\circ$ interface have been performed for the first time. The modification of spectra of the valence band and C 1$s$ and Si 2$p$ core levels in the process of formation of the Cs/SiC(100) 4$^\circ$ interface was analyzed. The suppression of the surface SiC state with a binding energy of 2.8 eV and the formation of a cesium-induced state with a binding energy of 10.5 eV were observed. The modification of the complex component structure in the spectrum of C 1$s$ core level has been detected and examined for the first time. It was found that Cs adsorption on the vicinal SiC(100) 4$^\circ$ surface results in intercalation of graphene islands on SiC(100) 4$^\circ$ with Cs atoms.

Received: 27.06.2016