N. I. Bochkareva, A. M. Ivanov, A. V. Klochkov, V. A. Tarala, Yu. G. Shreter, “The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 22,Pages <nobr>1

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The effect of the transformation of point defects under Joule heating on efficiency of LEDs with InGaN/GaN quantum wells

N. I. Bochkareva^a, A. M. Ivanov^a, A. V. Klochkov^a, V. A. Tarala^b, Yu. G. Shreter^a

^a Ioffe Institute, St. Petersburg
^b North-Caucasus Federal University, Stavropol, Russia

Abstract: It is shown that a short-time Joule heating of the active region of light-emitting diodes with InGaN/GaN quantum wells up to 125$^\circ$C at a current density of 150 A/cm$^2$ stimulates changes in the energy spectrum of defect states in the energy gap of GaN and leads to an increase in the quantum efficiency.

Received: 19.04.2016