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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 42, Issue 22, Pages 39–48 (Mi pjtf6258)

This article is cited in 1 paper

A study of the electrical properties of the porous GaP (111) surface

S. A. Masalova, A. V. Atrashchenkoab, V. P. Ulina, E. O. Popova, A. G. Koloskoa, S. V. Filippova

a Ioffe Institute, St. Petersburg
b St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: Local electrical properties of the surface of porous GaP have been measured by the method of tunneling spectroscopy in ultrahigh vacuum. Two surface areas with different electrical properties were found. The effect of anomalous field-induced photoemission was observed. The most probable reason for this effect is the presence of Ga$_2$O$_3$ and GaP nanoclusters and the high density of acceptor-type surface states associated with these clusters. Integral characteristics of the field electron emission from the sample surface were obtained by using a computerized recording system with online processing of current–voltage characteristics.

Received: 17.06.2016


 English version:
Technical Physics Letters, 2016, 42:11, 1118–1121

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© Steklov Math. Inst. of RAS, 2024