V. A. Solov'ev, M. Yu. Chernov, B. Ya. Mel'tser, A. N. Semenov, Ya. V. Terent'ev, D. D. Firsov, O. S. Komkov, S. V. Ivanov, “Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 20,Pages <nobr>33

This article is cited in 9 papers

Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions emitted in the mid-infrared spectral range

V. A. Solov'ev^a, M. Yu. Chernov^a, B. Ya. Mel'tser^a, A. N. Semenov^a, Ya. V. Terent'ev^a, D. D. Firsov^b, O. S. Komkov^b, S. V. Ivanov^a

^a Ioffe Institute, St. Petersburg
^b Saint Petersburg Electrotechnical University "LETI"

Abstract: Metamorphic InAs/InGaAs/InAlAs quantum wells with submonolayer InSb insertions have been grown for the first time by molecular beam epitaxy on GaAs (001) substrates using a graded InAlAs buffer layer with increasing In composition. The given nanoheterostructures demonstrate an intense photoluminescence at a wavelength of over of over 3 $\mu$m (80 K), which is shifted toward longer wavelengths as compared with that of the structures without InSb insertions.

Received: 01.06.2016