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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 42, Issue 20, Pages 73–78 (Mi pjtf6283)

This article is cited in 5 papers

Quantum efficiency of 4$H$-SiC detectors within the range of 114–400 nm

E. V. Kalininaa, G. N. Violinab, V. P. Belika, A. V. Nikolaeva, V. V. Zabrodskiia

a Ioffe Institute, St. Petersburg
b Saint Petersburg Electrotechnical University

Abstract: Electrical and spectrometric characteristics of 4$H$-SiC detectors with Cr Schottky barriers in the spectral ranges of 114–175 and 210–400 nm are studied. It is demonstrated that the quality of commercially available 4$H$-SiC layers is sufficient to construct UV radiation detectors with their external quantum efficiency exceeding 20% in the studied spectral ranges.

Received: 07.06.2016


 English version:
Technical Physics Letters, 2016, 42:10, 1057–1059

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