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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 42, Issue 15, Pages 19–26 (Mi pjtf6339)

Electron heat conductivity of epitaxial graphene on silicon carbide

Z. Z. Alisultanovabc, R. P. Meylanovd

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
b Prokhorov General Physics Institute of the Russian Academy of Sciences, Moscow
c Daghestan State University, Makhachkala
d Institute of Geothermy Problems, Makhachkala

Abstract: The diagonal component of the electron heat conductivity tensor of epitaxial graphene formed in a semiconductor has been investigated within a simple analytical model. It is shown that the heat conductivity sharply changes at a chemical potential close to the substrate band gap edge. Low-temperature expressions for the heat conductivity are derived.

Received: 20.10.2015


 English version:
Technical Physics Letters, 2016, 42:8, 779–782

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