RUS  ENG
Full version
JOURNALS // Pisma v Zhurnal Tekhnicheskoi Fiziki // Archive

Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 42, Issue 14, Pages 1–6 (Mi pjtf6351)

This article is cited in 3 papers

Production technology and optical absorption characteristics of CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ semiconductor solid solution films

M. À. Alieva, S. N. Kallaeva, T. M. Gadzhieva, R. M. Gadzhievaa, A. M. Ismailovb, B. A. Bilalovc

a Daghestan Institute of Physics after Amirkhanov, Makhachkala, Dagestan, Russia
b Daghestan State University, Makhachkala
c Daghestan State Technical University

Abstract: A production technology of thin CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ films has been developed based on the method of two-stage selenization of CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ precursor by a reactive component (selenium) in a carrier gas (nitrogen) flow. The morphology and structure of obtained films were studied by electron microscopy and X-ray diffraction techniques. The spectral dependence of the optical absorption coefficient was measured.

Received: 04.01.2016


 English version:
Technical Physics Letters, 2016, 42:7, 715–717

Bibliographic databases:


© Steklov Math. Inst. of RAS, 2024