Abstract:
A production technology of thin CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ films has been developed based on the method of two-stage selenization of CuIn$_{0.95}$Ga$_{0.05}$Se$_{2}$ precursor by a reactive component (selenium) in a carrier gas (nitrogen) flow. The morphology and structure of obtained films were studied by electron microscopy and X-ray diffraction techniques. The spectral dependence of the optical absorption coefficient was measured.