Growing InAs/GaAs quantum dots by droplet epitaxy under MOVPE conditions

Results of studying the formation of InAs quantum dots (QDs) on GaAs(100) substrates by droplet epitaxy using trimethylindium and arsine (AsH$_3$) as precursors are presented. The growth process was carried out at temperatures within 230–400$^\circ$C in a horizontal reactor for metalorganic vapor phase epitaxy (MOVPE) using high-purity hydrogen as the carrier gas. Data on the influence of process temperature on the QD size and the density of QD array and results of investigation of the low-temperature photoluminescence of obtained samples are presented.