K. S. Zhuravlev, T. V. Malin, V. G. Mansurov, V. E. Zemlyakov, V. I. Egorkin, Ya. M. Parnes, “Normally off transistors based on in situ passivated AlN/GaN heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 14,Pages <nobr>72

This article is cited in 3 papers

Normally off transistors based on in situ passivated AlN/GaN heterostructures

K. S. Zhuravlev^ab, T. V. Malin^a, V. G. Mansurov^a, V. E. Zemlyakov^c, V. I. Egorkin^c, Ya. M. Parnes^d

^a Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk
^b Novosibirsk State University
^c National Research University of Electronic Technology
^d ZAO Svetlana-Elektronpribor, St. Petersburg

Abstract: A molecular beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with an ultrathin AlN barrier has been developed. Based on these structures, normally off transistors with maximum current density of about 1 A/mm, saturation voltage of about 1 V, transconductance up to 350 mS/mm, and breakdown voltage above 60 V have been fabricated, in which the drain and gate current collapse phenomena are virtually absent.

Received: 29.02.2016