V. A. Smirnov, A. D. Mokrushin, V. P. Vasil’ev, N. N. Denisov, K. N. Denisova, “Field effect in a graphene oxide transistor for proton and electron–hole conductivities”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 13,Pages <nobr>18

This article is cited in 3 papers

Field effect in a graphene oxide transistor for proton and electron–hole conductivities

V. A. Smirnov^a, A. D. Mokrushin^b, V. P. Vasil’ev^a, N. N. Denisov^a, K. N. Denisova^c

^a Institute of Problems of Chemical Physics, Russian Academy of Sciences, Chernogolovka, Moscow region
^b Institute of Microelectronics Technology and High-Purity Materials RAS
^c Lomonosov Moscow State University

Abstract: Proton (wet atmosphere) and electron (reduced graphene oxide) conductivities can be observed in graphene oxide films. The field effect in a graphene oxide transistor for different conductivity types has been discovered and investigated.

Received: 08.02.2016