V. V. Emtsev, E. E. Zavarin, G. A. Oganesyan, V. N. Petrov, A. V. Sakharov, N. M. Shmidt, V. N. V’yuginov, A. A. Zybin, Ya. M. Parnes, S. I. Vidyakin, A. G. Gudkov, A. E. Chernyakov, “The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 13,Pages <nobr>80

This article is cited in 6 papers

The relationship between the reliability of transistors with 2D AlGaN/GaN channel and organization type of nanomaterial

V. V. Emtsev^a, E. E. Zavarin^a, G. A. Oganesyan^a, V. N. Petrov^a, A. V. Sakharov^a, N. M. Shmidt^a, V. N. V’yuginov^b, A. A. Zybin^b, Ya. M. Parnes^b, S. I. Vidyakin^c, A. G. Gudkov^c, A. E. Chernyakov^d

^a Ioffe Institute, St. Petersburg
^b ZAO Svetlana-Elektronpribor, St. Petersburg
^c Bauman Moscow State Technical University
^d Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg

Abstract: The first experimental results demonstrating that the carrier mobility in the AlGaN/GaN 2D channel of transistor structures (AlGaN/GaN-HEMT) is correlated with the manner in which the nanomaterial is organized and also with the operation reliability of transistor parameters are presented. It is shown that improving the nature of organization of the nanomaterials in AlGaN/GaN-HEMT structures, evaluated by the multifractal parameter characterizing the extent to which a nanomaterial is disordered (local symmetry breaking) is accompanied by a significant, several-fold increase in the electron mobility in the 2D channel and in the reliability of parameters of transistors fabricated from these structures.

Received: 26.02.2016