A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, I. N. Antonov, O. N. Gorshkov, D. I. Tetelbaum, “Resistive switching in Au/SiO<nobr>$_{x}$</nobr>/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 10,Pages <nobr>17

This article is cited in 4 papers

Resistive switching in Au/SiO$_{x}$/TiN/Ti memristive structures with varied geometric parameters and stoichiometry of dielectric film

A. I. Belov, A. N. Mikhaylov, D. S. Korolev, V. A. Sergeev, I. N. Antonov, O. N. Gorshkov, D. I. Tetelbaum

Lobachevsky State University of Nizhny Novgorod

Abstract: We have studied Au/SiO$_{x}$/TiN/Ti memristive structures obtained by magnetron sputtering, which exhibit a reproducible resistive switching effect. The influence of the thickness and stoichiometry of SiO$_x$ layer and the area of Au electrode on the parameters of switching has been analyzed. The obtained results show evidence in favor of the filament model of resistive switching in SiO$_x$ films.

Received: 26.12.2015