S. V. Tikhov, O. N. Gorshkov, M. N. Koryazhkina, I. N. Antonov, A. P. Kasatkin, “Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 10,Pages <nobr>78

This article is cited in 18 papers

Light-induced resistive switching in silicon-based metal–insulator–semiconductor structures

S. V. Tikhov^a, O. N. Gorshkov^ab, M. N. Koryazhkina^a, I. N. Antonov^ab, A. P. Kasatkin^a

^a Lobachevsky State University of Nizhny Novgorod
^b Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod

Abstract: We have studied light-induced resistive switching in metal–insulator–semiconductor structures based on silicon covered with a tunneling-thin SiO$_2$ layer and nanometer-thick layer of antimony. The role of an insulator was played by yttria-stabilized zirconia.

Received: 03.09.2015