A. V. Tumarkin, S. V. Razumov, A. G. Gagarin, A. A. Odinets, A. K. Mikhaĭlov, I. P. Pronin, V. M. Stozharov, S. V. Senkevich, N. K. Travin, “Ferroelectric films of barium strontium titanate on semi-insulating silicon carbide substrates”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 8,Pages <nobr>70

This article is cited in 8 papers

Ferroelectric films of barium strontium titanate on semi-insulating silicon carbide substrates

A. V. Tumarkin^a, S. V. Razumov^a, A. G. Gagarin^a, A. A. Odinets^a, A. K. Mikhaĭlov^ab, I. P. Pronin^c, V. M. Stozharov^d, S. V. Senkevich^c, N. K. Travin^e

^a Saint Petersburg Electrotechnical University "LETI"
^b Daghestan State University, Makhachkala
^c Ioffe Institute, St. Petersburg
^d Herzen State Pedagogical University of Russia, St. Petersburg
^e ZAO Svetlana-Elektronpribor, St. Petersburg

Abstract: Thin ferroelectric Ba$_{x}$Sr$_{1-x}$TiO$_{3}$ (BST) layers have been grown for the first time on semi-insulating silicon carbide substrates by RF magnetron sputtering of a ceramic target without using buffer sublayers. Results of investigation of the structure of obtained BST films and the electrical properties of related planar capacitors are presented. The obtained structures are characterized by high nonlinearity and low dielectric losses at microwave frequencies.

Keywords: Technical Physic Letter, Barium Strontium Titanate, Microwave Range, Travin, Planar Capacitor.

Received: 24.11.2015