Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 42, Issue 8,Pages 86–93(Mi pjtf6448)
The influence of growth conditions on the surface morphology and development of mechanical stresses in Al(Ga)N layers during metalorganic vapor phase epitaxy
Abstract:
We have studied the influence of technological parameters on the surface morphology and development of mechanical stresses in Al(Ga)N layers during their growth by metalorganic vapor phase epitaxy (MOVPE) on sapphire substrates. Minimization of tensile stresses under conditions of a retained atomically smooth surface can be achieved by using a combination of factors including (i) nitridation of substrate in ammonia flow, (ii) formation of two-layer AlN–Al(Ga)N structures by introducing a small amount (several percent) of Ga after growth of a thin AlN layer, and (iii) reduction of ammonia flow during growth of an Al(Ga)N layer.