B. I. Ivanov, M. Grajcar, I. L. Novikov, A. G. Vostretsov, E. Il'ichev, “A microwave cryogenic low-noise amplifier based on sige heterostructures”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 7,Pages <nobr>90

This article is cited in 15 papers

A microwave cryogenic low-noise amplifier based on sige heterostructures

B. I. Ivanov^a, M. Grajcar^bc, I. L. Novikov^a, A. G. Vostretsov^a, E. Il'ichev^ad

^a Novosibirsk State Technical University
^b Department of Experimental Physics, Comenius University, Bratislava
^c Institute of Physics, Slovak Academy of Sciences
^d Leibniz Institute of Photonic Technology, Germany

Abstract: A low-noise cryogenic amplifier for the measurement of weak microwave signals at sub-Kelvin temperatures is constructed. The amplifier has five stages based on SiGe bipolar heterostructure transistors and has a gain factor of 35 dB in the frequency band from 100 MHz to 4 GHz at an operating temperature of 800 mK. The parameters of a superconducting quantum bit measured with this amplifier in the ultralow-power mode are presented as an application example. The amplitude–frequency response of the “supercon-ducting qubit–coplanar cavity” structure is demonstrated. The ground state of the qubit is characterized in the quasi-dispersive measurement mode.

Keywords: Technical Physic Letter, Gain Factor, Microwave Theory Tech, Input Power Level, Superconducting Qubit.

Received: 20.11.2015