Specific features of nonequilibrium depletion accompanied by the trapping of minority carriers by surface states in metal–insulator–semiconductor structures

Specific features (abrupt changes in current caused by voltage variation) of nonequilibrium depletion in metal–insulator–semiconductor structures based on gallium arsenide and silicon with a 40-nm-thick film of yttria-stabilized zirconia were revealed. These features may help extend the range of application of the nonequilibrium depletion effect in microelectronics.