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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016 Volume 42, Issue 3, Pages 91–96 (Mi pjtf6523)

This article is cited in 1 paper

Absorption spectra of bulk aluminum nitride crystals doped with Er$^{3+}$ ions

Yu. V. Zhilyaev, V. V. Zelenin, E. N. Mokhov, S. S. Nagalyuk, N. K. Poletaev, A. P. Skvortsov

Ioffe Institute, St. Petersburg

Abstract: This Letter presents results of analysis of the absorption spectra of AlN : Er$^{3+}$ bulk crystals. In the spectral of 370–700 nm, absorption lines responsible for intraconfiguration electron transition from the ground state $^{4}$I$_{15/2}$ to the excited states of Er$^{3+}$ ions are found. Transitions to the levels of the $^{4}$F$_{9/2}$, $^{2}$H$_{11/2}$, and $^{4}$G$_{11/2}$ states at 2 K are studied in detail. The number of observed lines for these transitions fully agrees with that theoretically possible for f–f electron transitions in Er$^{3+}$ ions found in a noncubic crystal field. The small width of the observed lines and their number indicate that erbium ions displace mostly one regular crystal position. Most probably, Er$^{3+}$ occupies the position of Al. Energy positions of excited states for the considered transitions are determined.

Keywords: Erbium, Technical Physic Letter, Energy Position, Taxial Layer, Hexagonal Space Group.

Received: 11.09.2015


 English version:
Technical Physics Letters, 2016, 42:2, 156–159

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