A. V. Kudrin, Yu. A. Danilov, V. P. Lesnikov, E. A. Pitirimova, “Nonlinear room-temperature Hall effect in <nobr>$n$</nobr>-InFeAs layers”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 2,Pages <nobr>63

This article is cited in 5 papers

Nonlinear room-temperature Hall effect in $n$-InFeAs layers

A. V. Kudrin^ab, Yu. A. Danilov^ab, V. P. Lesnikov^a, E. A. Pitirimova^b

^a Scientific-Research Physicotechnical Institute at the Nizhnii Novgorod State University, Nizhnii Novgorod
^b Lobachevsky State University of Nizhny Novgorod

Abstract: Ferromagnetic $n$-InFeAs layers have been obtained by the method of laser ablation in vacuum. The InFeAs layers on GaAs(111) substrates exhibit nonlinear (with respect to magnetic field) Hall effect up to room temperatures. It is established that the crystallographic orientation of the GaAs substrates influences the magnetic properties of InFeAs layers.

Keywords: GaAs, Hall Effect, Technical Physic Letter, GaAs Substrate, Hall Coefficient.

Received: 17.03.2015