R. V. Levin, V. N. Nevedomskiy, B. V. Pushnii, N. A. Bert, M. N. Mizerov, “InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2016, Volume 42, Issue 2,Pages <nobr>79

This article is cited in 4 papers

InAs/GaSb superlattices fabricated by metalorganic chemical vapor deposition

R. V. Levin^ab, V. N. Nevedomskiy^a, B. V. Pushnii^ab, N. A. Bert^a, M. N. Mizerov^b

^a Ioffe Institute, St. Petersburg
^b Submicron Heterostructures for Microelectronics Research and Engineering Center, Russian Academy of Sciences, St. Petersburg

Abstract: The possibility of fabricating InAs/GaSb strained-layer superlattices by metalorganic chemical vapor deposition has been experimentally demonstrated. The results of transmission electron microscopy and photoluminescence spectroscopy investigations showed that the obtained structures comprise an InAs–GaSb superlattice on a GaSb substrate consisting of 2-nm-thick InAs and 3.3-nm-thick GaSb layers.

Received: 14.08.2015