Modification of the properties of vanadium dioxide by plasma-immersion ion implantation

The effect of hydrogenation of thin films of vanadium dioxide by plasma-immersion ion implantation on their conductivity is characterized. It is demonstrated that the parameters of the metal–insulator phase transition observed in VO$_2$ films depend on the irradiation dose. If the dose exceeds a certain threshold, film metallization occurs and the phase transition vanishes. The time of retention of hydrogen within films is considerably longer than that typical for other hydrogenation methods.