A hybrid mid-IR photodetector based on semiconductor quantum wells

We propose a hybrid photodetector device in which the interaction of an electromagnetic field with an electron subsystem of quantum wells is increased by the presence of SiC nanoparticles. Based on direct measurements of photoconductivity in the mid-IR range and numerical calculations using finite-difference time-domain method, it is shown that the proposed approach can increase the sensitivity of photodetector to electromagnetic radiation due to rotation of the polarization direction, including that in the near field of SiC nanoparticles.