Effect of the algaas seed layer composition on antiphase domains formation in (Al)GaAs structures grown by vapor-phase epitaxy on Ge/Si(100) substrates

GaAs-based heterostructures grown by metalorganic vapor-phase epitaxy on virtual Ge/Si substrates using Al$_x$Ga$_{1-x}$As seed layers with different aluminum contents $x$ in solid solution have been investigated. The influence of the $x$ value on the density and sizes of antiphase domains, outcropping onto the sample surface, and optical properties of the GaAs layer is demonstrated. The heterostructures have been grown on (100) substrates with small random off-cut from the nominal crystallographic orientation (0.7$^\circ$ towards [110]).