R. R. Reznik, K. M. Morozov, I. L. Krestnikov, K. P. Kotlyar, I. P. Sotnikov, L. Leandro, N. Akopian, G. E. Cirlin, “Directional radiation from GaAs quantum dots in AlGaAs nanowires”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021, Volume 47, Issue 8,Pages <nobr>47–50</nobr>

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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2021 Volume 47, Issue 8, Pages 47–50 (Mi pjtf6568)

This article is cited in 1 paper

Directional radiation from GaAs quantum dots in AlGaAs nanowires

R. R. Reznik^a, K. M. Morozov^a, I. L. Krestnikov^a, K. P. Kotlyar^b, I. P. Sotnikov^cde, L. Leandro^f, N. Akopian^f, G. E. Cirlin^bcdeg

^a Innolume GmbH, Dortmund, Germany
^b Saint Petersburg State University
^c Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg
^d Ioffe Institute, St. Petersburg
^e Institute for Analytical Instrumentation, Russian Academy of Sciences, St. Petersburg
^f DTU Fotonik, Kongens Lyngby, Denmark
^g St. Petersburg National Research University of Information Technologies, Mechanics and Optics

Abstract: We present the results on experimental studies of the directional radiation from GaAs quantum dots in AlGaAs nanowires grown by molecular beam epitaxy technique on silicon surface. It was shown that the radiation intensity from GaAs quantum dots in the direction of nanowires growth is 2 orders of magnitude higher than the intensity of radiation in the perpendicular direction.

Keywords: semiconductors, nanowires, quantum dots, molecular beam epitaxy, microphotoluminescence, directional radiation.

Received: 18.01.2021
Revised: 27.01.2021
Accepted: 27.01.2021

DOI: 10.21883/PJTF.2021.08.50855.18715

English version: Technical Physics Letters, 2021, 47:5, 405–408

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