Study of the influence of electron beam irradiation on the photoelectric and electrophysical properties of silicon HJT solar cells

In this work, HJT solar cells based on heterostructures $n$-Si:H/$c$-$n$-Si/$p$-Si:H were fabricated and studied, as well as the effect of electron irradiation on their photovoltaic properties. It has been shown that when irradiated by electrons with a fluence of 5$\cdot$10$^{14}$ cm$^{-2}$, a catastrophic drop in the quantum efficiency occurs at wavelengths greater than 600 nm, leading to a decrease in the short-circuit current from 33 mA/cm$^2$ to 22 mA/cm$^2$ and the open-circuit voltage from 0.7 V up to 0.52 V, and at a fluence of 1$\cdot$10$^{15}$ cm$^{-2}$ and 0.50 V. Admittance spectroscopy revealed a defect with an activation energy of 0.18 eV in irradiated structures, which could probably be responsible for degradation of photoelectrical properties, and its the concentration increases with increasing fluence.