Simulation of reactive high-power impulse magnetron sputtering process of a metal (vanadium) target

This paper presents a physicochemical model describing the process of high-power impulse reactive magnetron sputtering of a metal target. An increase in the pulse power density of the power source contributes to the heating of the target, which leads to an increase in the efficiency of spraying and the appearance of a flow of vaporized matter. The combination of these effects leads to an increase in the deposition rate of films of complex compounds. The presented paper presents the results of simulation of the sputtering process of a vanadium target in an Ar + O$_2$ medium, which demonstrated an increase in the sputtering rate by 8.5 times with an increase in power density from 0.5 kW/cm$^2$ to 1.5 kW/cm$^2$.