Synthesis of MgAl$_2$O$_4$ thin films by Al and Mg anodic evaporation in a low-pressure arc (Ar/O$_2$, 1 Pa)

Films of magnesium aluminate spinel were synthesized by reactive anodic evaporation of Al and Mg in a low- pressure arc (Ar/O$_2$, 1 Pa) with vapor condensation at low temperature ($\sim$400$^\circ$C). Film deposition was assisted by ion flux 25–100 eV, 1–2 mA/cm$^2$) with a significant content of metal ions. Cubic spinel films had a strong texture (100) and microstrains of the crystal lattice are of $\sim$1%. The deposition rate of films was 1–3 $\mu$m/h at controlling of a relative content of Al and Mg atoms within 1.2–2.4.