Field-effect transistor with graphene channel and epitaxial calcium fluoride layer as a gate dielectric

The samples of field-effect transistors for two-dimensional electronics using a combination of graphene (as a channel material) and epitaxial calcium fluoride (as a gate-insulating material), have been fabricated for the first time. Conventional measurements of terminal currents in these devices confirmed their functionality. The study can be treated as a step toward creation of the scalable transistors with the new promising materials. One of the nearest challenges is reduction of the sample-to-sample spread of the characteristics.