Contact systems for photovoltaic converters based on InGaAsP/InP

The investigations of the influence of the formation modes of contact systems based on Pd–Ge–Au and Au(Ge)–Ni–Au to $n$-type InGaAsP and NiCr–Ag–Au to $p$-type InGaAsP and InP on the value of specific contact resistance have been carried out. Low values of specific contact resistance of $\sim$10$^{-7}\Omega$ $\cdot$ cm$^2$ were achieved when using the Au(Ge)–Ni–Au contact system (annealing temperature – 420–440$^\circ$C) and $\sim$10$^{-6}\Omega$ $\cdot$ cm$^2$ when deposition of Pd–Ge–Au (at low annealing temperatures $<$ 200$^\circ$C) for $n$-InGaAsP solid solution compositions with low phosphorus content. For $p$-InGaAsP samples with a NiCr–Ag–Au contact system, the minimum contact resistance was $\sim$10$^{-6}\Omega$ $\cdot$ cm$^2$ at annealing temperatures of 460$^\circ$C.