High temperature light emitting diamond $p$–$i$–$n$ diode based on nitrogen-vacancy luminescence centers

A diamond light-emitting $p$–$i$–$n$-diode has been fabricated from a nitrogen-doped synthetic single crystal diamond ($n$-type conductivity) grown at high pressure and temperature, and thin layers grown by homoepitaxial growth from the gas phase: $i$-layer of low-doped diamond with nitrogen-vacancy optically active centers and a highly boron-doped layer ($p$-type conductivity). Volt-ampere characteristics and electroluminescence spectra were studied for the first time at temperatures in the range 300–680$^\circ$C. The emission spectrum at $T$ = 450$^\circ$C has a maximum in the region of 590–610 nm and is similar to the electroluminescence spectra of nitrogen-vacancy centers previously observed at room temperature in diamond $p$–$i$–$n$-diodes with $n$-layers doped with phosphorus. The intensity of the emission increases in proportion to the electrical power of the diode current.