F. I. Zubov, Yu. M. Shernyakov, A. A. Bekman, È. I. Moiseev, Yu. A. Salii (Guseva), M. M. Kulagina, N. A. Kalyuzhnyy, S. A. Mintairov, M. V. Maksimov, “Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024, Volume 50, Issue 6,Pages <nobr>23

Half-disk microlasers with half-ring contact based on InGaAs/GaAs quantum well-dots with high output power

F. I. Zubov^a, Yu. M. Shernyakov^b, A. A. Bekman^b, È. I. Moiseev^a, Yu. A. Salii (Guseva)^ab, M. M. Kulagina^b, N. A. Kalyuzhnyy^b, S. A. Mintairov^b, M. V. Maksimov^a

^a Alferov Federal State Budgetary Institution of Higher Education and Science Saint Petersburg National Research Academic University of the Russian Academy of Sciences, St. Petersburg, Russia
^b Ioffe Institute, St. Petersburg, Russia

Abstract: Light-current characteristics of half-disk microlasers with active region based on InGaAs/GaAs quantum well-dots emitting at wavelength of 1090 nm are studied. The devices were fabricated by cleaving 200 $\mu$m in diameter microdisks with 10 $\mu$m wide ring contacts. The maximal achieved CW output optical power amounted to 110 mW. Lasing was observed up to 113$^\circ$C.

Keywords: microlaser, half-disk resonator, whispering gallery modes, quantum well-dots.

Received: 29.11.2023
Revised: 06.12.2023
Accepted: 06.12.2023

DOI: 10.61011/PJTF.2024.06.57302.19821