Abstract:
The paper proposes a method for producing substrates from bulk crystals of the $\beta$-Ga$_2$O$_3$ gallium oxide by cleaving. With an example of growing the $\beta$-Ga$_2$O$_3$ è $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ layers on the fabricated substrates by epitaxy from metal-organic compounds, the possibility of using these substrates for homoepitaxy is shown. An analysis of the surface morphology and structural quality of the obtained layers has been carried out.