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Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024 Volume 50, Issue 7, Pages 43–46 (Mi pjtf6648)

On a successful experience of homoepitaxy of $\beta$-Ga$_2$O$_3$ layers on native substrates

D. A. Baumana, D. Yu. Panova, V. A. Spiridonova, A. Yu. Ivanova, A. V. Sakharovb, S. N. Rodinb, N. D. Prasolovb, A. E. Romanovab

a ITMO University, St. Petersburg, Russia
b Ioffe Institute, St. Petersburg, Russia

Abstract: The paper proposes a method for producing substrates from bulk crystals of the $\beta$-Ga$_2$O$_3$ gallium oxide by cleaving. With an example of growing the $\beta$-Ga$_2$O$_3$ è $\beta$-(Al$_x$Ga$_{1-x}$)$_2$O$_3$ layers on the fabricated substrates by epitaxy from metal-organic compounds, the possibility of using these substrates for homoepitaxy is shown. An analysis of the surface morphology and structural quality of the obtained layers has been carried out.

Keywords: gallium oxide, substrates, metal-organic vapor phase epitaxy, homoepitaxy.

Received: 27.10.2023
Revised: 21.12.2023
Accepted: 21.12.2023

DOI: 10.61011/PJTF.2024.07.57470.19783



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© Steklov Math. Inst. of RAS, 2025