D. V. Yurasov, A. V. Novikov, M. V. Shaleev, M. N. Drozdov, E. V. Demidov, A. V. Antonov, L. V. Krasil’nikova, D. A. Shmyrin, P. A. Yunin, Z. F. Krasil'nik, S. V. Sitnikov, D. V. Shcheglov, “Isotopically purified Si/SiGe epitaxial structures for quantum computing”, Pisma v Zhurnal Tekhnicheskoi Fiziki, 2024, Volume 50, Issue 10,Pages <nobr>22

Isotopically purified Si/SiGe epitaxial structures for quantum computing

D. V. Yurasov^a, A. V. Novikov^a, M. V. Shaleev^a, M. N. Drozdov^a, E. V. Demidov^a, A. V. Antonov^a, L. V. Krasil’nikova^a, D. A. Shmyrin^a, P. A. Yunin^a, Z. F. Krasil'nik^a, S. V. Sitnikov^b, D. V. Shcheglov^b

^a Institute for Physics of Microstructures, Russian Academy of Sciences, Nizhny Novgorod, Russia
^b Rzhanov Institute of Semiconductor Physics, Siberian Branch of Russian Academy of Sciences, Novosibirsk, Russia

Abstract: In this work, isotopically purified $^{28}$Si/$^{28}$Si$^{72}$Ge heterostructures were fabricated by molecular beam epitaxy. The obtained residual concentration of the $^{29}$Si and $^{73}$Ge isotopes with non-zero nuclear spin was of the order of 1–2 hundred ppm. The maximum electron mobility in the two-dimensional electron gas formed in these structures reached $\sim$4.5 $\cdot$ 10$^4$ cm$^2$/(V $\cdot$ s) at $T$ = 1.6 K, which confirms high quality of the fabricated samples. Low concentration of Si and Ge isotopes with non-zero nuclear spin and high crystalline quality allows using such structures in fabricating electron spin qubits.

Keywords: SiGe heterostructures, isotopic purification, molecular beam epitaxy, secondary ion mass spectroscopy, spin qubit.

Received: 24.11.2023
Revised: 24.11.2023
Accepted: 09.02.2024

DOI: 10.61011/PJTF.2024.10.57767.19813