Formation of GaAs layers with Ag nanoparticles by ion implantation

The formation possibility of GaAs-based composite material containing Ag nanoparticles using ion implantation technology was studied. For this purpose, GaAs layers were irradiated with Ag$^+$ ions by an energy $E$ = 30 keV at a current density of $J$=5 $\mu$A/cm$^2$ and a dose of $D$ = 6.2 $\cdot$ 10$^{16}$ ion/cm$^2$. To analyze the fabricated material, methods of electron microscopy and optical reflection spectroscopy were used. The experimental spectra were compared with the calculated ones of optical extinction obtained within the framework of the electromagnetic Mie theory. The formation of plasmon Ag nanoparticles ranging in size from 5 to 40 nm in the GaAs layer was demonstrated.